| Autor: |
Modak, Sushrut, Chernyak, Leonid, Xian, Minghan, Ren, Fan, Pearton, Stephen J., Khodorov, Sergey, Lubomirsky, Igor, Ruzin, Arie, Dashevsky, Zinovi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/28/2020, Vol. 128 Issue 8, p1-6, 6p, 1 Diagram, 4 Graphs |
| Abstrakt: |
The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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