Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm.

Autor:	Aruev, P. N., Belik, V. P., Zabrodskii, V. V., Kruglov, E. M., Nikolaev, A. V., Sakharov, V. I., Serenkov, I. T., Filimonov, V. V., Sherstnev, E. V.
Předmět:	AVALANCHES WAVELENGTHS SILICON FAR ultraviolet radiation
Zdroj:	Technical Physics; Aug2020, Vol. 65 Issue 8, p1333-1339, 7p
Abstrakt:	We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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