| Autor: |
Asanuma, Shutaro, Sumita, Kyoko, Miyaguchi, Yusuke, Horita, Kazumasa, Jimbo, Takehito, Saito, Kazuya, Miyata, Noriyuki |
| Předmět: |
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| Zdroj: |
AIP Advances; Aug2020, Vol. 10 Issue 8, p1-5, 5p |
| Abstrakt: |
In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V) hysteresis curve, disappears when the temperature during ALD or post-deposition annealing exceeds its respective critical temperatures, even though the HfO2/SiO2 stack structure is maintained. We found a correlation between Ti suboxide formation and IDM loss and speculated the effect of impurities and defects introduced during the ALD process on IDM operation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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