| Autor: |
Huang, Qiwei, Zhan, Chenchang, Wang, Lidan, Li, Zhiqun, Pan, Quan |
| Zdroj: |
IEEE Transactions on Circuits & Systems. Part II: Express Briefs; Sep2020, Vol. 67 Issue 9, p1494-1498, 5p |
| Abstrakt: |
This brief presents a nano-ampere CMOS current reference (CCR) for low power application with a wide temperature range from −40°C to 120°C. The current reference is generated by the division of a temperature-independent voltage and resistance in a simple way. The low temperature-independent voltage is generated based on the threshold voltage difference between two same-type NMOS transistors with different channel lengths working in the subthreshold region, while the temperature-independent resistance is made up by two poly resistors, whose temperature coefficients are opposite. By designing a low voltage to allow for a small resistance, the CCR circuit takes a small chip area while generating nano-ampere current. The proposed CCR circuit was implemented in a standard 0.18- ${\mu }\text{m}$ CMOS process and its active area is 0.054 mm2. Among the measured 10 samples, the average output current is 11.6 nA and the average temperature coefficient is 169 ppm/°C. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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