Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments.
| Autor: | Peruzzi, V. V., Cruz, W. S., Silva, G. A., Simoen, E., Claeys, C., Gimenez, S. P. |
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| Zdroj: | Journal of Integrated Circuits & Systems; 2020, Vol. 15 Issue 2, p1-5, 5p |
| Databáze: | Complementary Index |
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