| Autor: |
Zhang, Jie, Lin, Guangyang, Cui, Peng, Jia, Meng, Li, Zhengxin, Gundlach, Lars, Zeng, Yuping |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jun2020, Vol. 67 Issue 6, p2346-2351, 6p |
| Abstrakt: |
Metal-oxide thin-film transistors (TFTs) promise to enable lightweight and low-power applications, such as ultrathin active matrix displays and low-cost RF identification tags. However, most reported high-performance metal-oxide TFTs contain high-cost indium and gallium elements, leading to constraints in cost-sensitive application. Herein, we present enhancement-/depletion-mode (E-/D-mode) TiO2 TFTs via O2/N2 preannealing of TiO2 channel material prior to device fabrication process. It is found that the O2-annealed TiO2 TFTs exhibit improved performances compared to N2-annealed TiO2 TFTs, including increased mobility (μ), higher ON-/OFF-current ratio (ION/IOFF), and lower subthreshold swing (SS). This can be attributed to the passivation effects of O2 annealing, which leads to less oxygen vacancies at the channel and channel/oxide interface. On the other hand, the ionized oxygen vacancies result in the increased electron concentration in N2-annealed films and, thus, the negative shift of Vth in the TFT performance. This article delivers a possible approach to improve oxide TFT performance by passivation of oxygen vacancies. Furthermore, the controlled annealing process has a great potential in the logic inverter applications when both E- and D-mode TFTs are implemented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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