| Autor: |
Van, H. Nguyen, Baranov, A. N., Teissier, R., Zaknoune, M. |
| Předmět: |
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| Zdroj: |
AIP Advances; Jul2020, Vol. 10 Issue 7, p1-6, 6p |
| Abstrakt: |
A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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