Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors.

Autor: Wu, Xinyu, Han, Weihua, Zhao, Xiaosong, Guo, Yangyan, Zhang, Xiaodi, Yang, Fuhua
Zdroj: Journal of Semiconductors; Jul2020, Vol. 41 Issue 7, p1-5, 5p
Databáze: Complementary Index