Gate-regulated transition temperatures for electron hopping behaviours in silicon junctionless nanowire transistors.
Autor: | Wu, Xinyu, Han, Weihua, Zhao, Xiaosong, Guo, Yangyan, Zhang, Xiaodi, Yang, Fuhua |
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Zdroj: | Journal of Semiconductors; Jul2020, Vol. 41 Issue 7, p1-5, 5p |
Databáze: | Complementary Index |
Externí odkaz: |