Deep Silicon Barrier Structure as Chemical Sensor for Detection of Hydrochloric Acid Salt Solutions.

Autor: Kozinets, А. V., Manilov, A. I., Alekseev, S. A., Litvinenko, S. V., Lysenko, V. V., Skryshevsky, V. A.
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Zdroj: Journal of Nano- & Electronic Physics; 2020, Vol. 12 Issue 3, p1-5, 5p
Abstrakt: The possibility of the detection of hydrochloric acid salts by silicon sensory structures with photovoltaic principle of transformation has been considered in this work. The proposed structures realize transducer principle that differs from the well-known conventional LAPS (light-addressable potentiometric sensors). The basis of such devices is a “deep” barrier silicon structure. In the proposed scheme, the sensor signal is the photocurrent through the barrier structure induced by light in the range of high absorption. It allows receiving maximum changes of photocurrent due to changes of recombination rate on working surface. It should be noted that the proposed structure allows simpler technical realization than conventional LAPS. Several analytes (chlorides), containing different metals with various relative electronegativity (Fe, Zn and Al), were experimentally investigated. It has been experimentally shown that dependences of photocurrent on polarization voltage (the voltage that changes the surface band bending) is very informative for the detection of such analytes. Within the framework of the Stevenson-Keyes model, the obtained results can be explained qualitatively. The principal reason allowing the detection is the influence of the local electrostatic field of adsorbed ions on the recombination parameters of the silicon surface. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index