Multiple-bit storage properties of porphyrin monolayers on SiO2.

Autor: Qiliang Li, Surthi, Shyam, Mathur, Guru, Gowda, Srivardhan, Qian Zhao, Sorenson, Thomas A., Tenent, Robert C., Muthukumaran, Kannan, Lindsey, Jonathan S., Misra, Veena
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Zdroj: Applied Physics Letters; 9/6/2004, Vol. 85 Issue 10, p1829-1831, 3p, 1 Diagram, 3 Graphs
Abstrakt: Hybrid molecule-silicon capacitors have been fabricated by the self-assembly of a monolayer of porphyrin molecules on a silicon oxide surface. The porphyrin employed [5-(4-dihydroxyphosphorylphenyl)-10,15,20-trimesitylporphinatozinc(II)] attaches to silicon oxide via a phosphonate linkage. Cyclic voltammetry current and capacitance/conductance measurements have been used to characterize the capacitors. The presence of multiple distinct peaks in current density and capacitance/conductance measurements are associated with oxidation and reduction of the molecular monolayer. The charge-storage states of the capacitor indicate applicability for use in multiple-bit memory devices. [ABSTRACT FROM AUTHOR]
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