| Autor: |
Kuyama, Tomohiro, Urabe, Keiichiro, Fukawsawa, Masanaga, Tatsumi, Tetsuya, Eriguchi, Koji |
| Zdroj: |
Japanese Journal of Applied Physics; 6/22/2020, Vol. 59 Issue SJ, p1-7, 7p |
| Abstrakt: |
Energetic ion bombardment during plasma etching processes creates latent defects which play a role as carrier trapping/de-trapping sites in materials. In this study, we investigated the latent defects in Si substrate created by H2 plasma exposure. In the case of light-mass ion such as H+, the created defects were difficult to detect by conventional capacitance-based methods. We found that a modified conductance method with an equivalent circuit considering the plasma-damaged layer can identify the latent defects created in Si substrates after H2 and He plasma exposures. The conductance method quantifies the areal defect densities and the characteristic time constant of carrier trapping/de-trapping processes. Then, the reconstruction of the damaged structures by a rapid thermal annealing (RTA) was evaluated. It was confirmed that the RTA changes the conductance of damaged structures in response to the annealing temperature and the total thermal budget. The obtained results suggest that the modified conductance method is an effective tool to quantify the dynamic behaviors of latent defects in Si substrates after H2 and He plasma exposures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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