Autor: |
Bozhev, I. V., Trifonov, A. S., Presnov, D. E., Dagesyan, S. A., Dorofeev, A. A., Tsiniaikin, I. I., Krupenin, V. A. |
Zdroj: |
Moscow University Physics Bulletin; Jan2020, Vol. 75 Issue 1, p70-75, 6p |
Abstrakt: |
We propose a method of signal amplification for the scanning probe microscope mode, in which the distribution of the surface potential of a sample is measured simultaneously with topography using a local probe based on a field-effect transistor with a nanowire channel. The application of a method is especially relevant in the study of the electric potential of the surface in the case when it is covered with a dielectric layer that strongly weakens the electric field of the detected electric charges. A key feature of the method is in additional coating the surface of the dielectric layer with thin film of chromium ( k ; a film thickness is nm). This film consists of small conductive granules separated by tunnel barriers. It was experimentally shown on the fabricated test structures that a signal attenuated by a dielectric layer can be restored by . We estimated the sensitivity of transistors integrated into the probe of a scanning probe microscope in the range of mV in single frequency band at a frequency of Hz. [ABSTRACT FROM AUTHOR] |
Databáze: |
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Externí odkaz: |
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