Autor: |
Wang, Huanming, Sun, Sen, Xu, Jiayin, Lv, Xiaowei, Wang, Yuan, Peng, Yong, Zhang, Xi, Xiang, Gang |
Předmět: |
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Zdroj: |
Chinese Physics B; May2020, Vol. 29 Issue 5, p1-5, 5p |
Abstrakt: |
Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by post-growth thermal annealing. Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films. Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature. The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals. The results may be useful for room temperature spintronic applications based on group IV semiconductors. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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