| Autor: |
Sergent, S., Damilano, B., Vézian, S., Chenot, S., Tsuchizawa, T., Notomi, M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/1/2020, Vol. 116 Issue 22, p1-4, 4p, 2 Diagrams, 2 Graphs |
| Abstrakt: |
We report on GaN nanowire lasers fabricated by selective-area sublimation, and we show that sublimated GaN nanowires can exhibit ultraviolet lasing action under optical pumping beyond room temperature, up to 380 K. We study by microphotoluminescence the temperature-dependent behavior of single nanowire lasers between 7 K and 380 K and extract a characteristic temperature of T = 126 K. We finally present a statistical study of the maximum lasing temperature in individual sublimated GaN nanowires and use it to assess the performance of the selective-area sublimation method for nanowire-based lasing applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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