| Abstrakt: |
Capabilities for high-resistance determinations are essential for calibration of currents below 1 pA, as typically requested in several applications, including semiconductor device characterization, single-electron transport, and ion beam technologies. This need to calibrate low currents warrants the expansion of accessible values of high resistance. We present several methods for measuring resistances on the $\text{P}\Omega $ scale, namely potentiometry, dual-source bridge measurements, and teraohmmeter (TM) usage, all of which are subsequently compared to theoretical calculations. These methods were used to measure four 1- $\text{P}\Omega $ resistances, one 10- $\text{P}\Omega $ resistance, and one 100- $\text{P}\Omega $ resistance, all generated by wye-delta (Y- $\Delta $) networks containing three resistance elements. The differences between the experimentally obtained values and the theoretical values typically agree within 1% for 1-, 10-, and 100- $\text{P}\Omega $ resistances and the measurement uncertainties for the three techniques were estimated to be between 0.4%–4.8% for 1 $\text{P}\Omega $ , 2.8%–5.6% for 10 $\text{P}\Omega $ , and 4.4%–10.2% for 100 $\text{P}\Omega $. [ABSTRACT FROM AUTHOR] |
