| Autor: |
Zhu Wang, Yan Zhang, Xing Wei, Tingting Guo, Jibin Fan, Lei Ni, Yijun Weng, Zhengdi Zha, Jian Liu, Ye Tian, Ting Li, Li Duan |
| Zdroj: |
Physical Chemistry Chemical Physics (PCCP); 5/7/2020, Vol. 22 Issue 17, p9647-9655, 9p |
| Abstrakt: |
In this study, first-principles calculations based on the density functional theory (DFT) are exploited to investigate the electronic capabilities of SiC/InSe heterostructures. According to our results, the SiC/InSe heterostructure possesses an inherent type-II band alignment, which displays a noticeable Stark effect on the band gap under a stable electric field. Besides, the heterostructure exhibits a low carrier effective mass and a narrower band gap when it is subject to tensile strain. More interestingly, the transition from an indirect to a direct band gap occurs when 8% of compressive strain is applied. Taken together, findings in this study indicate that the SiC/InSe heterostructure opens up a new avenue for its application in the fields of optoelectronics and microelectronics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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