Autor: |
Gotoh, Yasuhito, Tsuji, Hiroshi, Nagao, Masayoshi, Masuzawa, Tomoaki, Neo, Yoichiro, Mimura, Hidenori, Okamoto, Tamotsu, Igari, Tomoya, Akiyoshi, Masafumi, Sato, Nobuhiro, Takagi, Ikuji |
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Zdroj: |
IEEE Transactions on Electron Devices; Apr2020, Vol. 67 Issue 4, p1660-1665, 6p |
Abstrakt: |
A field emission image sensor (FEIS) that consists of a field emitter array (FEA) and a cadmium telluride-based diode was proposed for use in the nuclear decommissioning of the Fukushima Daiichi nuclear power plant. FEAs and cadmium telluride/cadmium sulfide diode were irradiated with γ-rays for a dozen times, each with a dose of irradiation of 100 kGy, until the accumulated dose of irradiation reached 1 MGy. Electron emission properties of the FEAs and the photovoltaic properties of the cadmium telluride/cadmium sulfide diode were evaluated after each irradiation. Neither the FEAs nor the cadmium telluride/cadmium sulfide diode showed significant deterioration in their current–voltage characteristics. A test tube of FEIS consisting of an FEA and cadmium telluride-cadmium sulfide diode showed a photo-detection performance both before and after the γ-ray irradiation to the dose of irradiation of 1 MGy. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
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