The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures.

Autor:	Alaferdov, A. V., Vikhrova, O. V., Danilov, Yu. A., Zvonkov, B. N., Moshkalev, S. A.
Předmět:	AUDITING standards QUANTUM wells GRAPHENE INDIUM gallium arsenide LASER beams SEMICONDUCTOR films MULTILAYERED thin films
Zdroj:	Optics & Spectroscopy; Mar2020, Vol. 128 Issue 3, p387-394, 8p
Abstrakt:	A significant (almost two orders of magnitude) increase in the intensity of photo- and electroluminescence of a diode structure with an InGaAs/GaAsSb/GaAs quantum well, GaMnAs layer as a spin injector, and contact coating of a multilayer graphene film has been experimentally detected. The result has been explained by the possible formation of a hybrid system of multilayer graphene and GaAs semiconductor under the influence of He–Ne laser radiation, which leads to a change in the band diagram of the heterostructure. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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