| Autor: |
Ţălu, Ştefan, Achour, Amine, Solaymani, Shahram, Nikpasand, Kimia, Dalouji, Vali, Sari, Amirhossein, Rezaee, Sahar, Nezafat, Negin B. |
| Zdroj: |
Microscopy Research & Technique; May2020, Vol. 83 Issue 5, p457-463, 7p |
| Abstrakt: |
This work describes an analysis of titanium dioxide (TiO2) thin films prepared on silicon substrates by direct current (DC) planar magnetron sputtering system in O2/Ar atmosphere in correlation with three‐dimensional (3D) surface characterization using atomic force microscopy (AFM). The samples were grown at temperatures 200, 300, and 400°C on silicon substrate using the same deposition time (30 min) and were distributed into four groups: Group I (as‐deposited samples), Group II (samples annealed at 200°C), Group III (samples annealed at 300°C), and Group IV (samples annealed at 400°C). AFM images with a size of 0.95 μm × 0.95 μm were recorded with a scanning resolution of 256 × 256 pixels. Stereometric analysis was carried out on the basis of AFM data, and the surface topography was described according to ISO 25178‐2:2012 and American Society of Mechanical Engineers (ASME) B46.1‐2009 standards. The maximum and minimum root mean square roughnesses were observed in surfaces of Group II (Sq = 7.96 ± 0.1 nm) and Group IV (Sq = 3.87 ± 0.1 nm), respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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