| Autor: |
Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa |
| Zdroj: |
Japanese Journal of Applied Physics; Apr2020, Vol. 59 Issue SG, p1-1, 1p |
| Abstrakt: |
The development of high mobility semiconductors is required to further improve the performance of electronic devices. In this study, we report that an effective hole mobility as high as 480 cm2 V−1 s−1 has been realized in a strained Si/SiGe heterostructure pMOSFET fabricated on a (110)-oriented conventional Si wafer. This result shows the feasibility of a cost-effective Si-wafer-based semiconductor platform suitable for the next generation of integrated circuits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
