Effect of hydrogen incorporation on sub-gap density of states in amorphous InGaZnO thin-film transistors.
| Autor: | Rogers, David J., Look, David C., Teherani, Ferechteh H., Mattson, George W., Vogt, Kyle T., Malmberg, Christopher E., Cheong, Paul H.-Y., Wager, John F., Graham, Matt W. |
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| Zdroj: | Proceedings of SPIE; 12/10/2019, Vol. 11281, p112811G-112811G-8, 1p |
| Databáze: | Complementary Index |
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