| Autor: |
Li, Pei-jun, Wu, Jian-wen, Guo, Rui-xuan, Zhu, Bo, Fu, Te, Zang, Chuan-lai, Tu, Li, Zhao, Jin-shi, Zhang, Kai-liang, Mi, Wei, Yang, Zheng-chun, Zhang, Xing-cheng, Luan, Chong-biao |
| Zdroj: |
Optoelectronics Letters; Mar2020, Vol. 16 Issue 2, p118-121, 4p |
| Abstrakt: |
Gallium oxide (Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500 °C on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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