| Autor: |
Ezubchenko, I. S., Chernykh, M. Y., Andreev, A. A., Grishchenko, J. V., Chernykh, I. A., Zanaveskin, M. L. |
| Zdroj: |
Nanotechnologies in Russia; Jul2019, Vol. 14 Issue 7/8, p385-388, 4p |
| Abstrakt: |
A unique method for forming gallium nitride–based heterostructures on silicon substrates at low growth temperatures (less than 950°C) is proposed and implemented. The formed heterostructure has an atomically smooth surface with a mean square roughness of 0.45 nm and high crystalline quality. The average layer resistance of the channel of a two-dimensional electron gas was 415 Ω/square at an electron concentration of 1.65 × 1013 cm–2 and mobility 920 cm2/(V s). The maximum value of the drain saturation current for transistors with a gate width of 1.2 mm was 930 mA/mm, which corresponds to the best results worldwide for gallium nitride transistors on silicon substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink