| Autor: |
Gruzintsev, A. N., Red'kin, A. N., Tatsii, V. I., Barthou, C., Benalloul, P. |
| Předmět: |
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| Zdroj: |
Semiconductors; Sep2004, Vol. 38 Issue 9, p1001-1004, 4p |
| Abstrakt: |
Inhomogeneous broadening of the blue-emission band in the luminescence spectrum of nominally undoped gallium nitride films grown on substrates of sapphire with orientation (0001) and silicon with orientation (001) using chemical vapor deposition is observed. Studies of the emission spectra under different conditions of excitation of GaN films made it possible to detect three elementary bands with peaks at 2.65, 2.84, and 3.01 eV in the blue region of luminescence of these films at room temperature. Assumptions are made about the types of intrinsic and impurity defects involved in the formation of various centers in GaN as sources of blue emission. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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