| Autor: |
Masahiro Hara, Satoshi Asada, Takuya Maeda, Tsunenobu Kimoto |
| Zdroj: |
Applied Physics Express; 4/1/2020, Vol. 13 Issue 4, p1-1, 1p |
| Abstrakt: |
We investigated the doping concentration dependence of the barrier height and forward carrier transport mechanism in Ni/SiC Schottky barrier diodes (SBDs) in the wide range of 6.8 × 1015–. Forward current–voltage characteristics in heavily-doped SiC SBDs () can be well reproduced by a thermionic field emission model. The barrier height decreased with increasing doping concentration and the barrier height drop in the most heavily-doped SBD () was about 0.2 eV, which quantitatively agreed with the image force lowering of 0.18 eV caused by the high electric field. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
