Limitations of Control of Electrophysical Characteristics of Quantum-Size Structures by Electrochemical Capacitance–Voltage Profiling.

Autor: Goncharov, V. E., Nikonov, A. V., Batmanovskaya, N. S., Pashkeev, D. A., Kudryashov, A. V.
Předmět:
Zdroj: Journal of Communications Technology & Electronics; Mar2020, Vol. 65 Issue 3, p311-315, 5p
Abstrakt: A method is proposed to control the distribution of carrier concentration over the profile of multilayer heteroepitaxial structures (HESs) with quantum-size active region based on the AlGaAs/GaAs heteropair grown with the aid of molecular beam epitaxy using electrochemical capacitance–voltage profiling (ECV). A calculation model for the region of the space charge at the electrolyte–semiconductor interface is developed. The ECV profiles of the HES grown on the GaAs〈100〉 substrates are analyzed. The limiting depths of the space-charge regions are calculated for different concentrations of carriers in the layers under study. Limitations of the method to control the distribution of carrier concentration in the quantum-size region of the HES are outlined. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
Externí odkaz: