| Autor: |
Li, Junhong, Tang, Yu, Zhang, Guojun, Liu, Jian, Liu, Kuifang, Hu, Bin, Li, Wei |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Apr2020, Vol. 41 Issue 4, p573-576, 4p |
| Abstrakt: |
A hole-controlled lateral insulated gate bipolar transistor (HC-LIGBT) device with an ultrafast turn-off speed is investigated and experimentally demonstrated. Utilizing a high-permittivity material as the dielectric on the novel device structure, the hole carrier movements are controlled. In the device ON-state, the anode plasma injection effect is amplified to improve the current density. In the OFF-state, the electrons in the drift region are rapidly neutralized by the hole current, after which the anode voltage is pulled to the bus voltage by the external driving circuit through a voltage couple to realize a fast turn-off speed. The ON-state current is not compromised for the switching speed. The device is fabricated with a $1~\mu \text{m}$ fully custom process using Si3N4 as the dielectric. The test results indicate that the breakdown voltage of the device is 350 V, the ON-state current density is 155 A/cm2 at an anode voltage of 2 V, and the rising edge of the voltage on the anode in the turn-off state lasts only 90 ns. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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