Crystallization Behavior of Amorphous Si Nanoinclusions Embedded in Silicon Oxide Matrix.

Autor:	Sarikov, Andrey
Předmět:	SILICON oxide SILICON oxide films PHASE separation CRYSTAL structure NANOPARTICLE size
Zdroj:	Physica Status Solidi. A: Applications & Materials Science; Feb2020, Vol. 217 Issue 4, p1-5, 5p
Abstrakt:	Herein, crystallization behavior of amorphous Si (a‐Si) nanoparticles embedded in Si oxide matrix is studied thermodynamically. The change of the Gibbs free energy of the Si nanoinclusion/Si oxide matrix system upon crystallization of the Si nanoinclusion core is calculated as a function of normalized core radius. Minimum values of the Gibbs free energy determine equilibrium crystallization states of Si nanoinclusions. The equilibrium radii of the crystallized Si parts normalized with respect to the Si particle radii, as well as the barriers for crystallization, are calculated as functions of Si size and annealing temperature. The degree of Si crystallization is shown to increase with Si nanoparticle size. The existence of minimum critical radius of Si nanoinclusions for the onset of crystallization is demonstrated. Obtained results have a good correlation with available experimental data and contribute to the understanding of the formation of crystalline Si structures in the nanosized Si/Si oxide matrix composites formed by phase separation of nonstoichiometric silicon oxide films during high‐temperature annealing. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Plný text