| Autor: |
Zhang, Yi, Tang, Liangliang, Zhang, Bo, Wang, Pei, Xu, Chang |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/9/2020, Vol. 116 Issue 10, p1-5, 5p, 2 Diagrams, 4 Charts, 3 Graphs |
| Abstrakt: |
Herein, we quantitatively investigated the mechanisms of interfacial phonon mismatch and quantum confinement underlying the phonon bottleneck effect in InN/InxGa(1−x)N multiple quantum wells. Obvious extension of carrier thermalization with the longest relaxation time of 4.75 ns due to an enhanced phonon bottleneck effect was observed. It was found that a stronger quantum confinement could effectively reduce carrier relaxation rate via improving the elastic carrier–carrier scattering, while a larger phonon mismatch may give a higher initial carrier temperature due to the reflection of optical phonons and probably confinement of quasi-optical phonons. This study provides an essential theoretical insight into photovoltaic and other optoelectronic devices aiming to reduce the carrier relaxation rate via the phonon bottleneck effect. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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