| Autor: |
Yoshinari Kimura, Yoshiaki Hattori, Masatoshi Kitamura |
| Zdroj: |
Japanese Journal of Applied Physics; 3/1/2020, Vol. 59 Issue 3, p1-1, 1p |
| Abstrakt: |
The capacitance characteristics of pentacene metal-oxide-semiconductor (MOS) capacitors with a large uncovered pentacene area have been investigated. The capacitance measured was examined by assuming that the uncovered area is represented by a distributed constant circuit. The frequency dependence of the capacitance was reproduced by an equation derived based on the assumption. The sheet resistance for the uncovered area of a MOS capacitor was calculated as a function of the gate voltage from the capacitance measured. The mobility of a MOS capacitor with an uncovered area was estimated by fitting a curve to the gate voltage dependence of the sheet resistance, and was in the range of 0.48–0.64 cm2 V−1 s−1. In addition, the mobilities were compared with those calculated from the current–voltage characteristics of pentacene transistors fabricated on the same substrate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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