| Autor: |
Françoise Hippert, Philippe Kowalczyk, Nicolas Bernier, Chiara Sabbione, Xavier Zucchi, Damien Térébénec, Cristian Mocuta, Pierre Noé |
| Předmět: |
|
| Zdroj: |
Journal of Physics D: Applied Physics; 4/8/2020, Vol. 53 Issue 15, p1-1, 1p |
| Abstrakt: |
Sb2Te3 is a layered material with outstanding properties leading to applications in interfacial phase-change memories, spintronic and thermoelectric devices. For successful integration in devices, controlling the orientation of the atomic planes of Sb2Te3 deposited by sputtering on various materials used for electrodes and on dielectric layers is required. We have succeeded in depositing Sb2Te3 thin films (thickness in the range 10–100 nm) by sputtering in industrial deposition equipments on WSi, TiN, amorphous Si as well as on native and thermal silicon oxide layers. The structure and orientation of the films were studied by x-ray diffraction. The Sb and Te planes are found parallel to the substrate, whatever the nature of the bottom material, provided that the sputtering conditions avoid a Te deficiency in the deposited film. These results show that deposition of Sb2Te3 with out-of-plane orientation on silicon oxide is actually possible, in contrast with previous literature results. Scanning transmission electron microscopy images of the interface between the Sb2Te3 film and the bottom material allow to elucidate the growth mechanism. The formation of a surface layer containing a few Te planes on top of the bottom material is mandatory for the subsequent growth of an out-of-plane oriented Sb2Te3 film by van der Waals epitaxy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
