Autor: |
Vysotskii, S. L., Khivintsev, Yu. V., Kozhevnikov, A. V., Sakharov, V. K., Filimonov, Yu. A., Stognii, A. I., Novitskii, N. N., Nikitov, S. A. |
Předmět: |
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Zdroj: |
Journal of Communications Technology & Electronics; Dec2019, Vol. 64 Issue 12, p1398-1406, 9p |
Abstrakt: |
The influence of strains on the ferromagnetic resonance (FMR) spectrum of submicron yttrium iron garnet (YIG) films produced by the ion beam sputtering on gadolinium-gallium garnet (GGG) and silicon (Si) substrates is explored. It is shown that the strain influence is displayed as a frequency shift of the absorption maximum in the FMR spectrum. The results indicate that the studied YIG/GGG and YIG/Si films have an efficient magnetoelastic coupling of the spin and elastic subsystems, which suggests that ion beam sputtering of YIG films on GGG and Si substructures can be a promising technique for production of straintronic devices. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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