| Autor: |
Lu, H., Reese, C., Jeon, S., Sundar, A., Fan, Y., Rizzi, E., Zhuo, Y., Qi, L., Goldman, R. S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/10/2020, Vol. 116 Issue 6, p1-5, 5p, 2 Diagrams, 3 Graphs |
| Abstrakt: |
We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature- and substrate-dependence of the size distributions of droplets and QDs, as well as the relative roles of Ga/N diffusivity and GaN nucleation rates on QD formation. We report on two competing mechanisms mediated by Ga surface diffusion, namely, QD formation at or away from pre-existing Ga droplets. We discuss the relative roles of nucleation- and coarsening-dominant growth, as well as zincblende vs wurtzite polytype selection, on various substrates. These insights provide an opportunity for tailoring QD size distributions and polytype selection for a wide range of III-N semiconductor QDs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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