| Autor: |
Portoff, Amanda, Venzie, Andrew, Stavola, Michael, Fowler, W. Beall, Pearton, Stephen J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/7/2020, Vol. 127 Issue 5, p1-4, 4p, 2 Diagrams, 1 Graph |
| Abstrakt: |
β-Ga2O3 is a promising ultrawide bandgap semiconductor for high power and extreme environment applications. The dominant O—H center in Ga2O3 has been assigned to a Ga(1) vacancy–2H (VGa(1)-2H) complex. An analysis of the polarization dependence of the vibrational absorption of the VGa(1)-2D center in monoclinic β-Ga2O3 provides a unique strategy for the determination of both the orientation of the principal dielectric axes in the near infrared and the direction of the vibrational transition moment of the defect. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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