| Autor: |
He, Nuotian, Ouyang, Xiaoping, Xu, Mengxuan, Tang, Huili, Liu, Bo, Zhu, Zhichao, Gu, Mu, Xu, Jun, Liu, Jinliang, Chen, Liang |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Jan2020, Vol. 67 Issue 1, p400-404, 5p |
| Abstrakt: |
High-quantity and large-size β-Ga2O3 single crystals were grown by the optimal edge-defined film-fed method. Under the excitation of 241Am α-ray, the scintillation light yields of the as-grown and after-annealed β-Ga2O3 single crystal are estimated to be 4797 and 6788 ph/5.5 MeV-α, respectively. The energy resolutions of the as-grown and after-annealed β-Ga2O3 single crystal are 21.8% and 19.1%, respectively. Annealing in the air can eliminate some color centers and decrease the concentration of free electrons, which can lead to the near-infrared absorption. The light yield and the energy resolution are some slightly worse than that of the commercial Bi4Ge3O12 (BGO) scintillator. However, the fast component with the time constant of 7 ns for the as-grown and after-annealed β-Ga2O3 single crystal reaches 25% of the total yield, suggesting that the β-Ga2O3 single crystal grown by the present method is a promising fast scintillator, which could be used in the ultrafast timing resolution detection systems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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