Autor: |
Chernyak, M. E., Ranneva, E. V., Ulanova, A. V., Nikiforov, A. Yu., Verizhnikov, A. I., Tsyrlov, A. M., Fedosov, V. S., Shchepanov, A. N., Kalashnikov, V. D., Titovets, D. O. |
Předmět: |
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Zdroj: |
Russian Microelectronics; Nov2019, Vol. 48 Issue 6, p415-421, 7p |
Abstrakt: |
This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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