Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack.
| Autor: | D O Filatov, D V Vrzheshch, O V Tabakov, A S Novikov, A I Belov, I N Antonov, V V Sharkov, M N Koryazhkina, A N Mikhaylov, O N Gorshkov, A A Dubkov, A Carollo, B Spagnolo |
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| Zdroj: | Journal of Statistical Mechanics: Theory & Experiment; Dec2019, Vol. 2019 Issue 12, p1-1, 1p |
| Databáze: | Complementary Index |
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