| Autor: |
Dubov, L. Yu., Ilyukhina, O. V., Stepanov, S. V., Funtikov, Yu. V., Khmelevsky, N. O., Aksenenko, A. Yu., Shtotsky, Yu. V., Elnikova, L. V., Alexeev, N. N. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2019, Vol. 2182 Issue 1, p050018-1-050018-4, 4p |
| Abstrakt: |
Transformation of radiation defects structure in proton-irradiated silicon during 22 month ageing at room temperature were studied by means of the positron annihilation lifetime spectroscopy and Fourier transformed infrared spectroscopy. Three pairs of irradiated samples were isochronically annealed and measured after 1, 14 and 22 months since irradiation. Significant distinctions in behavior of the positron trapping rate upon annealing were detected. They can be explained by evolution of interstitial clusters in the disordered regions of irradiated Si during long-term ageing at room temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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