| Autor: |
Ito, Nobukazu, Yamada, Yoshiaki, Kikuta, Kuniko, Kikkawa, Takamaro, Huo, Donald Tai-chan |
| Předmět: |
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| Zdroj: |
Electronics & Communications in Japan, Part 2: Electronics; Feb96, Vol. 79 Issue 2, p109-117, 9p |
| Abstrakt: |
To investigate the reflow filling property of Al-Si- Cu in a contact hole with a high aspect ratio, the influences of the contact hole profile and underlayer material on the filling property were evaluated. It was found that in order to fill a contact hole, the wall of the contact hole must be covered with an Al-Si-Cu layer thicker than a certain thickness, prior to reflow. The minimum thickness of the Al-Si-Cu layer on the wall, that is, step coverage, was dependent on the aspect ratio of the contact hole. Therefore, the reflow filling property was restricted by the aspect ratio of the contact hole. In addition, it was found that the minimum thickness of the Al-Si-Cu layer could be reduced if Ti or TiSi2 was used as the underlayer for reflow, resulting in the increase of the aspect ratio. When TiSi2 was used, the alloy spikes, which were always observed when Ti was used, could be avoided. Therefore, it was found that TiSi2 was excellent as an underlayer material when Al reflow was employed for filling contact holes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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