Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon.
Autor: | Koval, Olga Yu., Fedorov, Vladimir V., Kryzhanovskaya, Natalia V., Sapunov, Georgiy A., Kirilenko, Demid A., Pirogov, Evgeniy V., Filosofov, Nikolay G., Serov, Aleksei Yu., Shtrom, Igor V., Bolshakov, Alexey D., Mukhin, Ivan S. |
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Zdroj: | CrystEngComm; 1/14/2020, Vol. 22 Issue 2, p283-292, 10p |
Abstrakt: | III–V/Si integration is one of the bottlenecks of modern semiconductor technology. Dilute nitride phosphides (III–P–N) are among the promising materials providing lattice matching with Si. In this work, we study the effect of growth conditions on the chemical composition and properties of GaP |
Databáze: | Complementary Index |
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