Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics.

Autor:	Jian-Ying Chen, Xin-Yuan Zhao, Lu Liu, Jing-Ping Xu
Předmět:	DIELECTRICS TRANSISTORS BUFFER layers GATES ORGANIC field-effect transistors THIN film transistors CAPACITORS
Zdroj:	Chinese Physics B; Nov2019, Vol. 28 Issue 12, p1-1, 1p
Abstrakt:	NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C–V and I–V characteristics are compared. It is found that the Al2O3/HfO2 back-gate transistor with NH3-plasma treatment shows the best electrical performance: high on–off current ratio of 1.53 × 107, higher field-effect mobility of 26.51 cm2/V·s, and lower subthreshold swing of 145 mV/dec. These are attributed to the improvements of the gate dielectric and interface qualities by the NH3-plasma treatment and the addition of Al2O3 as a buffer layer. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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