The Structure, Electrical and Magnetoresistance Properties of Heterogeneous Films [In2O3/(Co40Fe40B20)34(SiO2)66]92.

Autor: Volochaev, M. N., Zhilova, O. V., Pankov, S. Yu., Sitnikov, A. V., Makagonov, V. A., Babkina, I. V.
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Zdroj: AIP Conference Proceedings; 2019, Vol. 2174 Issue 1, p020274-1-020274-5, 5p
Abstrakt: The [In2O3/(Co40Fe40B20)34(SiO2)66]92 thin films were obtained by ion beam sputtering. X-ray and TEM studies of the structure and phase composition showed that the [In2O3/(Co40Fe40B20)34(SiO2)66]92 films characterized by multilayer structure, where (Co40Fe40B20)34(SiO2)66 nanocomposite layers and In2O3 spacers are amourphous. It is shown that the introduction of In2O3 spacers in (Co40Fe40B20)34(SiO2)66 nanocomposite leads to decreasing in specific resistance due to creation continues conductivity layers of low-resistance In2O3. All investigated samples characterized by the presence of magnetoresistance both at 77 K and at room temperature, which is characteristic of ferromagnetic metal-dielectric nanocomposites. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index