| Autor: |
Gamov, I., Hartmann, C., Wollweber, J., Dittmar, A., Straubinger, T., Bickermann, M., Kogut, I., Fritze, H., Irmscher, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/7/2019, Vol. 126 Issue 21, p1-7, 7p, 1 Chart, 4 Graphs |
| Abstrakt: |
AlN bulk single crystals grown by the physical vapor transport method may be beneficially applied as substrates for deep ultraviolet light emitting devices or as a basic material for piezoelectric resonators operating at high temperatures. Identification of point defects which deteriorate the optical, electrical, and electromechanical properties of AlN crystals for such applications is the subject of the present work. Using Raman spectroscopy, two local vibrational modes (LVMs) were discovered at wave numbers of 1189 cm−1 and 1148 cm−1. By analyzing an AlN crystal intentionally enriched with the carbon isotope 13C, it is unambiguously shown that the two LVMs originate from two different, but in each case carbon-related defects. Furthermore, it is evidenced that the defect underlying the LVM at 1189 cm−1 contains exactly two carbon atoms. The tricarbon defect-related LVM reported earlier in an infrared absorption study is found to be Raman active at 1772 cm−1. The Raman scattering intensity of all three LVMs strongly depends on the photon energy of the exciting light what is interpreted as a resonance Raman effect. This allows linking the identified defects with their contribution to the strong, carbon-related ultraviolet absorption around 4.7 eV and proves that these defects introduce optically and electrically active deep levels in the bandgap of AlN. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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