| Autor: |
Rogers, Jack, Choi, Hyeonseon, Gassner, Steven, Nolting, Westly, Pennock, Daniel, Consiglio, Steven, LaBella, Vincent P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/21/2019, Vol. 126 Issue 19, pN.PAG-N.PAG, 6p, 1 Diagram, 7 Graphs |
| Abstrakt: |
The electrostatic barrier of a Au/1.4 nm HfO 2 / 0.8 nm SiO 2 / Si (001) structure was mapped with ballistic hole emission microscopy on p-type silicon substrates to nanoscale dimensions over a square micrometer. The 1.4 nm HfO 2 layer showed three concentrations of barrier heights localized in different regions of the sample. These concentrations are consistent with the barrier heights of HfO 2 / Si -p, native SiO 2 / Si -p, and one centered at − 0.45 eV. The latter barrier height is attributed to an ultrathin HfO 2 (1–3 monolayers). This study demonstrates the power of electrostatic barrier mapping to visualize complex and nonuniform interfaces. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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