Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs.
| Autor: | Melisa Ekin Gulseren, Gokhan Kurt, Turkan Gamze Ulusoy Ghobadi, Amir Ghobadi, Gurur Salkim, Mustafa Ozturk, Bayram Butun, Ekmel Ozbay |
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| Zdroj: | Materials Research Express; Sep2019, Vol. 6 Issue 9, p1-1, 1p |
| Databáze: | Complementary Index |
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