| Autor: |
Srirejeki, Susi, Mayasari, Rina Dewi, Mulyono, Aditya Eka, Pradana, Yuwana, Budi, Agus Setyo, Nuryadi, Ratno |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2019, Vol. 2169 Issue 1, p060009-1-060009-7, 7p, 2 Diagrams, 2 Charts, 5 Graphs |
| Abstrakt: |
Conductivity-based sensor using interdigitated electrode (IDE) as a substrate has been studied by scientists due to its potential application for sensing devices. Synthesis of zinc oxide (ZnO) nanorods (NRs) which were doped by cerium (Ce) of 0% (pure ZnO) and 10% (ZnO/Ce) has been done on the IDE substrate. Ce-doped ZnO NRs are synthesized in two steps, i.e., deposition of seed layer and growth of Ce-doped ZnO NRs. Seed layer is coated on an IDE substrate by dip-coating method using zinc acetate dihydrate (ZnAc) and diethylamine (DEA) dissolved in 0.3 M ethylene glycol monomethyl ether. ZnO NRs is grown by hydrothermal method from solution zinc nitrate tetrahydrate (ZNT), hexamethylene-tetramine (HMT) and Ce as a dopant. IV characteristics with various substrate temperatures at 37°C, and 150°C to 250°C have been observed for pure ZnO and ZnO/Ce samples. Even the results of I-V characteristic generally follow Ohm’s law, Ce doping affects the current vs temperature dependence. Ce doping enhances a decrease in the current when the temperature is increased from 150°C to 180°C and then the current increases with increasing temperature from 180°C to 250°C. This result indicates that Ce doping modifies electrical property of ZnO crystal in high temperature, which is essential to be clarified as a basic behavior for future sensor application. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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