| Autor: |
Masuda, Hiroshi, Tanoue, Tomonori, Oka, Tohru, Terano, Akihisa, Pierce, Michael W., Hosomi, Kazuhiko, Ouchi, Kiyoshi, Mozume, Teruo |
| Předmět: |
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| Zdroj: |
Microwave & Optical Technology Letters; 2/20/96, Vol. 11 Issue 3, p159-163, 5p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 7 Graphs |
| Abstrakt: |
A self-aligned process for InP/InGaAs HBTs using T-shaped emitter electrodes has been developed. Using this process, the difference in spacing between the emitter mesa and the base electrode, due to the emitter orientations, can be minimized. The process also reduces differences in characteristics of the HBTs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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