| Autor: |
C Himwas, S Collin, H-L Chen, G Patriarche, F Oehler, L Travers, O Saket, F H Julien, J-C Harmand, M Tchernycheva |
| Předmět: |
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| Zdroj: |
Nanotechnology; 7/26/2019, Vol. 30 Issue 30, p1-1, 1p |
| Abstrakt: |
We report on the structural and optical properties of GaAs0.7P0.3/GaP core–shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission electron microscopy (STEM) analyses demonstrate that the GaAsP NW core develops an inverse-tapered shape with a formation of an unintentional GaAsP shell having a lower P content. Without surface passivation, this unintentional shell produces no luminescence because of strong surface recombination. However, passivation of the surface with a GaP shell leads to the appearance of a secondary peak in the luminescence spectrum arising from this unintentional shell. The attribution of the luminescence peaks is confirmed by correlated cathodoluminescence and STEM analyses of the same NW. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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