| Autor: |
Youvanidha, A., Vidhya, B., Nelson, P. Issac, Kannan, R. Rathes, babu, S. K. Suresh |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2019, Vol. 2166 Issue 1, p020023-1-020023-8, 8p, 1 Diagram, 2 Charts, 6 Graphs |
| Abstrakt: |
Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical properties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibits the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv-Vis spectroscopy. The electrical resistivity of the deposited films is in the order ~10-4 which was on par with the earlier reports suitable for TCO applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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