| Autor: |
Nechay, K., Mereuta, A., Paranthoen, C., Brévalle, G., Levallois, C., Alouini, M., Chevalier, N., Perrin, M., Suruceanu, G., Caliman, A., Guina, M., Kapon, E. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/21/2019, Vol. 115 Issue 17, pN.PAG-N.PAG, 4p, 1 Diagram, 4 Graphs |
| Abstrakt: |
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of high-density Stranski–Krastanow InAs quantum dots on an InP substrate. The QD density and emission wavelength were independently adjusted by employing a double-cap growth sequence. Optimization of the spacer layer thickness and strain compensation rendered possible nucleation of a relatively high number of QD layers per antinode of the electromagnetic standing wave, which in turn enabled a high output power continuous wave operation of about 2.2 W. The operation wavelength could be tuned over 60 nm, taking advantage of the broadband gain characteristic of QD media. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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